Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

J. Dho; Chi Wah Leung; J. L. MacManus-Driscoll; M. G. Blamire

doi:10.1016/j.jcrysgro.2004.04.028

Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

J. Dho, Chi Wah Leung, J. L. MacManus-Driscoll, M. G. Blamire

Research output: Journal article publication › Journal article › Academic research › peer-review

85 Citations (Scopus)

Abstract

We have studied the crystal growth behavior of multiferroic YMnO3films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3film was grown on the (111) Y-stabilized ZrO2substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3film on the Si substrate with an amorphous SiO2layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO3phase was a stable one under tensile stress by the (0001) Al2O3substrate, while it competed with the (011)-oriented orthorhombic YMnO3phase under the compressive stress by the (111) SrTiO3substrate.

Original language	English
Pages (from-to)	548-553
Number of pages	6
Journal	Journal of Crystal Growth
Volume	267
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.028
Publication status	Published - 1 Jul 2004
Externally published	Yes

Keywords

A1. X-ray diffraction
A3. Laser epitaxy
B1. Oxides
B2. Dielectric materials

ASJC Scopus subject areas

Condensed Matter Physics

More information

10.1016/j.jcrysgro.2004.04.028

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title = "Epitaxial and oriented YMnO3 film growth by pulsed laser deposition",

abstract = "We have studied the crystal growth behavior of multiferroic YMnO3films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3film was grown on the (111) Y-stabilized ZrO2substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3film on the Si substrate with an amorphous SiO2layer exhibited (0001) or (11{\=2}1) orientation. The (0001) oriented hexagonal YMnO3phase was a stable one under tensile stress by the (0001) Al2O3substrate, while it competed with the (011)-oriented orthorhombic YMnO3phase under the compressive stress by the (111) SrTiO3substrate.",

keywords = "A1. X-ray diffraction, A3. Laser epitaxy, B1. Oxides, B2. Dielectric materials",

author = "J. Dho and Leung, {Chi Wah} and MacManus-Driscoll, {J. L.} and Blamire, {M. G.}",

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T1 - Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

AU - Dho, J.

AU - Leung, Chi Wah

AU - MacManus-Driscoll, J. L.

AU - Blamire, M. G.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - We have studied the crystal growth behavior of multiferroic YMnO3films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3film was grown on the (111) Y-stabilized ZrO2substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3film on the Si substrate with an amorphous SiO2layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO3phase was a stable one under tensile stress by the (0001) Al2O3substrate, while it competed with the (011)-oriented orthorhombic YMnO3phase under the compressive stress by the (111) SrTiO3substrate.

AB - We have studied the crystal growth behavior of multiferroic YMnO3films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3film was grown on the (111) Y-stabilized ZrO2substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3film on the Si substrate with an amorphous SiO2layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO3phase was a stable one under tensile stress by the (0001) Al2O3substrate, while it competed with the (011)-oriented orthorhombic YMnO3phase under the compressive stress by the (111) SrTiO3substrate.

KW - A1. X-ray diffraction

KW - A3. Laser epitaxy

KW - B1. Oxides

KW - B2. Dielectric materials

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DO - 10.1016/j.jcrysgro.2004.04.028

M3 - Journal article

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SP - 548

EP - 553

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

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