Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

D. Mangelinck, Jiyan Dai, J. S. Pan, S. K. Lahiri

Research output: Journal article publicationJournal articleAcademic researchpeer-review

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In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.
Original languageEnglish
Pages (from-to)1736-1738
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 20 Sep 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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