Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

D. Mangelinck; Jiyan Dai; J. S. Pan; S. K. Lahiri

doi:10.1063/1.124803

Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

D. Mangelinck, Jiyan Dai, J. S. Pan, S. K. Lahiri

Research output: Journal article publication › Journal article › Academic research › peer-review

256 Citations (Scopus)

Abstract

In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.

Original language	English
Pages (from-to)	1736-1738
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	12
DOIs	https://doi.org/10.1063/1.124803
Publication status	Published - 20 Sep 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124803

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abstract = "In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.",

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AU - Mangelinck, D.

AU - Dai, Jiyan

AU - Pan, J. S.

AU - Lahiri, S. K.

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Y1 - 1999/9/20

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AB - In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.

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U2 - 10.1063/1.124803

DO - 10.1063/1.124803

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Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

Abstract

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