In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)