Abstract
In situ annealing in an X-ray photoelectron spectroscopy system and ex situ rapid thermal annealing were used to investigate the effect of slight doping with Pt on the thermal stability of NiSi film on (100) and (111) Si substrates. Better stability of NiSi at high temperatures were observed and were attributed to an increased nucleation temperature to 900 °C with Pt addition. Also, doping caused the films to develop a texture with the relationship (100)NiSi∥(111)Si and (010)NiSi∥(100)Si.
Original language | English |
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Pages (from-to) | 1736-1738 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 12 |
DOIs | |
Publication status | Published - 20 Sept 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)