Abstract
The use of diffused quantum well structures to enhance single transverse mode operation in vertical cavity surface emitting semiconductor lasers is proposed. A step diffused quantum well (DFQW) structure overcomes the influence of spatial hole burning and thermal lensing in vertical cavity surface emitting lasers (VCSEL). It can be realized by using a circular hollow mask to define the DFQW structure.
| Original language | English |
|---|---|
| Pages (from-to) | 295-296 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 1 Dec 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, United States Duration: 10 Nov 1997 → 13 Nov 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering