Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

C. P. Chan; Tai Man Yue; C. Surya; A. M C Ng; A. B. Djurišić; F. Scholz; C. K. Liu; M. Li

doi:10.1109/EDSSC.2005.1635312

Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

C. P. Chan, Tai Man Yue, C. Surya, A. M C Ng, A. B. Djurišić, F. Scholz, C. K. Liu, M. Li

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages	479-482
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2005.1635312
Publication status	Published - 1 Dec 2006
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	19/12/05 → 21/12/05

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

More information

10.1109/EDSSC.2005.1635312

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title = "Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes",

abstract = "We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.",

author = "Chan, {C. P.} and Yue, {Tai Man} and C. Surya and Ng, {A. M C} and Djuri{\v s}i{\'c}, {A. B.} and F. Scholz and Liu, {C. K.} and M. Li",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2005.1635312",

language = "English",

isbn = "0780393392",

pages = "479--482",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Chan, CP, Yue, TM, Surya, C, Ng, AMC, Djurišić, AB, Scholz, F, Liu, CK & Li, M 2006, Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635312, pp. 479-482, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635312

Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. / Chan, C. P.; Yue, Tai Man; Surya, C. et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 479-482 1635312.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

AU - Chan, C. P.

AU - Yue, Tai Man

AU - Surya, C.

AU - Ng, A. M C

AU - Djurišić, A. B.

AU - Scholz, F.

AU - Liu, C. K.

AU - Li, M.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.

AB - We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.

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U2 - 10.1109/EDSSC.2005.1635312

DO - 10.1109/EDSSC.2005.1635312

M3 - Conference article published in proceeding or book

SN - 0780393392

SN - 9780780393394

SP - 479

EP - 482

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

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