Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3thin films via field-assisted oxygen vacancy modulation

Hon Fai Wong; Sheung Mei Ng; Wang Fai Cheng; Yukuai Liu; Xinxin Chen; Danny von Nordheim; Chee Leung Mak; Jiyan Dai; Bernd Ploss; Chi Wah Leung

doi:10.1016/j.sse.2017.07.008

Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO₃thin films via field-assisted oxygen vacancy modulation

Hon Fai Wong, Sheung Mei Ng, Wang Fai Cheng, Yukuai Liu, Xinxin Chen, Danny von Nordheim, Chee Leung Mak, Jiyan Dai, Bernd Ploss, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TCof the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TCby more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

Original language	English
Pages (from-to)	56-61
Number of pages	6
Journal	Solid-State Electronics
Volume	138
DOIs	https://doi.org/10.1016/j.sse.2017.07.008
Publication status	Published - 1 Dec 2017

Keywords

Ferroelectric
LSMO
Pulse chains
Voltage control magnetism

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1016/j.sse.2017.07.008

http://hdl.handle.net/10397/96200

Cite this

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title = "Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3thin films via field-assisted oxygen vacancy modulation",

abstract = "Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TCof the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TCby more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.",

keywords = "Ferroelectric, LSMO, Pulse chains, Voltage control magnetism",

author = "Wong, {Hon Fai} and Ng, {Sheung Mei} and Cheng, {Wang Fai} and Yukuai Liu and Xinxin Chen and {von Nordheim}, Danny and Mak, {Chee Leung} and Jiyan Dai and Bernd Ploss and Leung, {Chi Wah}",

year = "2017",

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doi = "10.1016/j.sse.2017.07.008",

language = "English",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3thin films via field-assisted oxygen vacancy modulation

AU - Wong, Hon Fai

AU - Ng, Sheung Mei

AU - Cheng, Wang Fai

AU - Liu, Yukuai

AU - Chen, Xinxin

AU - von Nordheim, Danny

AU - Mak, Chee Leung

AU - Dai, Jiyan

AU - Ploss, Bernd

AU - Leung, Chi Wah

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TCof the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TCby more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

AB - Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TCof the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TCby more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

KW - Ferroelectric

KW - LSMO

KW - Pulse chains

KW - Voltage control magnetism

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DO - 10.1016/j.sse.2017.07.008

M3 - Journal article

SN - 0038-1101

VL - 138

SP - 56

EP - 61

JO - Solid-State Electronics

JF - Solid-State Electronics

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