Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, T. Osipowicz, Jiyan Dai, A. See

Research output: Journal article publicationConference articleAcademic researchpeer-review

21 Citations (Scopus)

Abstract

The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.
Original languageEnglish
Pages (from-to)171-181
Number of pages11
JournalMicroelectronic Engineering
Volume60
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
EventMaterials for Advanced Metallization (MAM 2001) - Sigtuna, Sweden
Duration: 5 Mar 20017 Mar 2001

Keywords

  • Layer inversion
  • LPCVD
  • Ni silicidation
  • Ni(Pt)Si
  • RTCVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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