Enhanced sensing performance of MISiC schottky-diode hydrogen sensor by using HfON as gate insulator

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)


MISiC Schottky-diode hydrogen sensor with HfON gate insulator fabricated by NO nitridation is investigated. The hydrogen-sensing characteristics of this novel sensor are studied by doing steady-state and transient measurements at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that this novel sensor can rapidly respond to hydrogen variation and can give a significant response even at a low H2concentration of 48-ppm, e.g., a sensitivity of 81% is achieved at 450°C and 2.5 V, which is two times higher than its HfO2counterpart. The enhanced sensitivity of the device should be attributed to a remarkable reduction of the current of the sensor before hydrogen exposure by the NO nitridation because the NO nitridation can passivate the O vacancies in the insulator and facilitate the formation of a SiO2interlayer to suppress the leakage current associated with high-k materials.
Original languageEnglish
Article number5759300
Pages (from-to)2940-2946
Number of pages7
JournalIEEE Sensors Journal
Issue number11
Publication statusPublished - 2 Nov 2011
Externally publishedYes


  • HfO 2
  • hydrogen sensors
  • nitridation
  • Schottky diode
  • silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation


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