Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3thin films

K. Au; X. S. Gao; Juan Wang; Z. Y. Bao; J. M. Liu; Jiyan Dai

doi:10.1063/1.4812219

Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO₃thin films

K. Au, X. S. Gao, Juan Wang, Z. Y. Bao, J. M. Liu, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

53 Citations (Scopus)

Abstract

Ag nanoparticle (NP) embedded BaTiO3(BTO) thin films on SrRuO3-coated SrTiO3(STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.

Original language	English
Article number	027019
Journal	Journal of Applied Physics
Volume	114
Issue number	2
DOIs	https://doi.org/10.1063/1.4812219
Publication status	Published - 14 Jul 2013

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4812219

http://hdl.handle.net/10397/5868

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@article{4b5137db163c4e38b113c025ebfcd1b6,

title = "Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3thin films",

abstract = "Ag nanoparticle (NP) embedded BaTiO3(BTO) thin films on SrRuO3-coated SrTiO3(STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.",

author = "K. Au and Gao, {X. S.} and Juan Wang and Bao, {Z. Y.} and Liu, {J. M.} and Jiyan Dai",

year = "2013",

month = jul,

day = "14",

doi = "10.1063/1.4812219",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3thin films

AU - Au, K.

AU - Gao, X. S.

AU - Wang, Juan

AU - Bao, Z. Y.

AU - Liu, J. M.

AU - Dai, Jiyan

PY - 2013/7/14

Y1 - 2013/7/14

N2 - Ag nanoparticle (NP) embedded BaTiO3(BTO) thin films on SrRuO3-coated SrTiO3(STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.

AB - Ag nanoparticle (NP) embedded BaTiO3(BTO) thin films on SrRuO3-coated SrTiO3(STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.

UR - http://www.scopus.com/inward/record.url?scp=84880345552&partnerID=8YFLogxK

U2 - 10.1063/1.4812219

DO - 10.1063/1.4812219

M3 - Journal article

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 027019

ER -

Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO₃thin films

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