Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3thin films

K. Au, X. S. Gao, Juan Wang, Z. Y. Bao, J. M. Liu, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

49 Citations (Scopus)


Ag nanoparticle (NP) embedded BaTiO3(BTO) thin films on SrRuO3-coated SrTiO3(STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.
Original languageEnglish
Article number027019
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 14 Jul 2013

ASJC Scopus subject areas

  • General Physics and Astronomy


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