Enhanced resistive memory in Nb-doped BaTiO3ferroelectric diodes

Qiao Jin; Chunyan Zheng; Yongcheng Zhang; Chaojing Lu; Jiyan Dai; Zheng Wen

doi:10.1063/1.4993938

Enhanced resistive memory in Nb-doped BaTiO₃ferroelectric diodes

Qiao Jin
, Chunyan Zheng
, Yongcheng Zhang
, Chaojing Lu
, Jiyan Dai
, Zheng Wen

Research output: Journal article publication › Journal article › Academic research › peer-review

35 Citations (Scopus)

Abstract

In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

Original language	English
Article number	032902
Journal	Applied Physics Letters
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.4993938
Publication status	Published - 17 Jul 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4993938

http://hdl.handle.net/10397/76163

Cite this

@article{dbb7d968fcae490880fbde62c980d236,

title = "Enhanced resistive memory in Nb-doped BaTiO3ferroelectric diodes",

abstract = "In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.",

author = "Qiao Jin and Chunyan Zheng and Yongcheng Zhang and Chaojing Lu and Jiyan Dai and Zheng Wen",

year = "2017",

month = jul,

day = "17",

doi = "10.1063/1.4993938",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Enhanced resistive memory in Nb-doped BaTiO3ferroelectric diodes

AU - Jin, Qiao

AU - Zheng, Chunyan

AU - Zhang, Yongcheng

AU - Lu, Chaojing

AU - Dai, Jiyan

AU - Wen, Zheng

PY - 2017/7/17

Y1 - 2017/7/17

N2 - In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

AB - In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

UR - https://www.scopus.com/pages/publications/85025075312

U2 - 10.1063/1.4993938

DO - 10.1063/1.4993938

M3 - Journal article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032902

ER -

Enhanced resistive memory in Nb-doped BaTiO₃ferroelectric diodes

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this