Enhanced resistive memory in Nb-doped BaTiO3ferroelectric diodes

Qiao Jin; Chunyan Zheng; Yongcheng Zhang; Chaojing Lu; Jiyan Dai; Zheng Wen

doi:10.1063/1.4993938

Enhanced resistive memory in Nb-doped BaTiO₃ferroelectric diodes

Qiao Jin, Chunyan Zheng, Yongcheng Zhang, Chaojing Lu, Jiyan Dai, Zheng Wen

Research output: Journal article publication › Journal article › Academic research › peer-review

26 Citations (Scopus)

Abstract

In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

Original language	English
Article number	032902
Journal	Applied Physics Letters
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.4993938
Publication status	Published - 17 Jul 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4993938

http://hdl.handle.net/10397/76163

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abstract = "In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.",

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AU - Jin, Qiao

AU - Zheng, Chunyan

AU - Zhang, Yongcheng

AU - Lu, Chaojing

AU - Dai, Jiyan

AU - Wen, Zheng

PY - 2017/7/17

Y1 - 2017/7/17

N2 - In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

AB - In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.

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Enhanced resistive memory in Nb-doped BaTiO₃ferroelectric diodes

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