Enhanced resistive memory in Nb-doped BaTiO3ferroelectric diodes

Qiao Jin, Chunyan Zheng, Yongcheng Zhang, Chaojing Lu, Jiyan Dai, Zheng Wen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

In this study, we report on enhanced resistive memory in BaTiO3-based ferroelectric diodes due to the doping of donors. A large ON/OFF current ratio of ∼2000, about two orders of magnitude higher than that of Au/BaTiO3/SrRuO3, is achieved in a Au/Nb:BaTiO3/SrRuO3diode at room temperature. This can be ascribed to the enhanced ferroelectric-modulation on the potential barrier at the Nb:BaTiO3/SrRuO3interface associated with the (NbTi4+5+)· donors, which gives rise to an efficient control of device transport between a bulk-limited current in the ON state and an interface-limited Schottky emission in the OFF state. In contrast, the resistance switching is suppressed in a Au/Fe:BaTiO3/SrRuO3device since the (FeTi4+3+)′ acceptors suppress semiconducting character of the BaTiO3thin film and make the polarization-modulation of the band diagram negligible. The present work facilitates the design of high-performance resistive memory devices based on ferroelectric diodes with controllable charged defects.
Original languageEnglish
Article number032902
JournalApplied Physics Letters
Volume111
Issue number3
DOIs
Publication statusPublished - 17 Jul 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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