TY - JOUR
T1 - Enhanced Piezoelectric Response of Layered In2Se3/MoS2Nanosheet-Based van der Waals Heterostructures
AU - Yuan, Shuoguo
AU - Io, Weng Fu
AU - Mao, Jianfeng
AU - Chen, Yancong
AU - Luo, Xin
AU - Hao, Jianhua
N1 - Funding Information:
This work was supported by the grants from Research Grants Council of Hong Kong (GRF PolyU 153025/19P) and PolyU Grant (UABC). X.L. also thanks support from the NSFC (11804286 and 11832019) and the Fundamental Research Funds for the Central Universities (19lgpy263). The calculations were supported by the Special Program for Applied Research on Super Computation of the NSFC Guangdong Joint Fund (the second phase).
Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/12/24
Y1 - 2020/12/24
N2 - Two-dimensional (2D) piezoelectricity has been extensively addressed in recent years, which leads to great potential applications in advanced smart devices. However, the vertical piezoelectric response of numerous 2D layered materials is theoretically absent when applying electric field or strain perpendicular to its surface because of the inversion symmetry. Recently, vertical piezoelectric properties of In2Se3, which exhibits a low piezoelectric response, were reported. Therefore, enhancing the piezoelectric performance in 2D layered materials is still challenging. Here, we report a remarkable out-of-plane piezoelectric performance in the In2Se3/MoS2 van der Waals (vdW) heterostructure. Such a vdW heterostructure shows a high positive value of piezoelectric coefficient d33. By combining the experimental studies and density functional theory calculations, the excellent piezoelectric properties result from the type II band alignment, which causes a larger interfacial dipole moment. Moreover, the high-precision piezoelectric actuators in 2D atomic scale are demonstrated. By changing the driven voltage, the deformation of the upper surface of piezoelectric actuators linearly modulated. Our study opens the door to design next-generation nanoelectronics and multifunctional coupling atomic-scale devices.
AB - Two-dimensional (2D) piezoelectricity has been extensively addressed in recent years, which leads to great potential applications in advanced smart devices. However, the vertical piezoelectric response of numerous 2D layered materials is theoretically absent when applying electric field or strain perpendicular to its surface because of the inversion symmetry. Recently, vertical piezoelectric properties of In2Se3, which exhibits a low piezoelectric response, were reported. Therefore, enhancing the piezoelectric performance in 2D layered materials is still challenging. Here, we report a remarkable out-of-plane piezoelectric performance in the In2Se3/MoS2 van der Waals (vdW) heterostructure. Such a vdW heterostructure shows a high positive value of piezoelectric coefficient d33. By combining the experimental studies and density functional theory calculations, the excellent piezoelectric properties result from the type II band alignment, which causes a larger interfacial dipole moment. Moreover, the high-precision piezoelectric actuators in 2D atomic scale are demonstrated. By changing the driven voltage, the deformation of the upper surface of piezoelectric actuators linearly modulated. Our study opens the door to design next-generation nanoelectronics and multifunctional coupling atomic-scale devices.
KW - actuator
KW - InSe
KW - piezoelectricity
KW - two-dimensional material
KW - van der Waals heterostructure
UR - http://www.scopus.com/inward/record.url?scp=85096660637&partnerID=8YFLogxK
U2 - 10.1021/acsanm.0c02513
DO - 10.1021/acsanm.0c02513
M3 - Journal article
AN - SCOPUS:85096660637
SN - 2574-0970
VL - 3
SP - 11979
EP - 11986
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 12
ER -