Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

Xiang Jing Zhuo, Jun Zhang, Dan Wei Li, Han Xiang Yi, Zhi Wei Ren, Jin Hui Tong, Xing Fu Wang, Xin Chen, Bi Jun Zhao, Wei Li Wang, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current - voltage (I - V) performance curve, light output - current (L - I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.

Original languageEnglish
Article number068502
JournalChinese Physics B
Issue number6
Publication statusPublished - Jun 2014
Externally publishedYes


  • efficiency droop
  • InGaN/AlInGaN superlattice
  • light-emitting diode

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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