Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Bi Jun Zhao; Xin Chen; Zhi Wei Ren; Jin Hui Tong; Xing Fu Wang; Dan Wei Li; Xiang Jing Zhuo; Jun Zhang; Han Xiang Yi; Shu Ti Li

doi:10.1088/1674-1056/22/8/088401

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Bi Jun Zhao
, Xin Chen
, Zhi Wei Ren
, Jin Hui Tong
, Xing Fu Wang
, Dan Wei Li
, Xiang Jing Zhuo
, Jun Zhang
, Han Xiang Yi
, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Original language	English
Article number	088401
Journal	Chinese Physics B
Volume	22
Issue number	8
DOIs	https://doi.org/10.1088/1674-1056/22/8/088401
Publication status	Published - Aug 2013

Keywords

GaN-based solar cells
InGaN/GaN multiple quantum wells
Metal-organic chemical vapor deposition

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1088/1674-1056/22/8/088401

Cite this

@article{aaae355bd5924157a2d84929408b5e0d,

title = "Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content",

abstract = "The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65\% and 13\% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.",

keywords = "GaN-based solar cells, InGaN/GaN multiple quantum wells, Metal-organic chemical vapor deposition",

author = "Zhao, \{Bi Jun\} and Xin Chen and Ren, \{Zhi Wei\} and Tong, \{Jin Hui\} and Wang, \{Xing Fu\} and Li, \{Dan Wei\} and Zhuo, \{Xiang Jing\} and Jun Zhang and Yi, \{Han Xiang\} and Li, \{Shu Ti\}",

year = "2013",

month = aug,

doi = "10.1088/1674-1056/22/8/088401",

language = "English",

volume = "22",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

AU - Zhao, Bi Jun

AU - Chen, Xin

AU - Ren, Zhi Wei

AU - Tong, Jin Hui

AU - Wang, Xing Fu

AU - Li, Dan Wei

AU - Zhuo, Xiang Jing

AU - Zhang, Jun

AU - Yi, Han Xiang

AU - Li, Shu Ti

PY - 2013/8

Y1 - 2013/8

N2 - The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

AB - The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

KW - GaN-based solar cells

KW - InGaN/GaN multiple quantum wells

KW - Metal-organic chemical vapor deposition

UR - https://www.scopus.com/pages/publications/84883870814

U2 - 10.1088/1674-1056/22/8/088401

DO - 10.1088/1674-1056/22/8/088401

M3 - Journal article

AN - SCOPUS:84883870814

SN - 1674-1056

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

IS - 8

M1 - 088401

ER -

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this