Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Bi Jun Zhao; Xin Chen; Zhi Wei Ren; Jin Hui Tong; Xing Fu Wang; Dan Wei Li; Xiang Jing Zhuo; Jun Zhang; Han Xiang Yi; Shu Ti Li

doi:10.1088/1674-1056/22/8/088401

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Bi Jun Zhao, Xin Chen, Zhi Wei Ren, Jin Hui Tong, Xing Fu Wang, Dan Wei Li, Xiang Jing Zhuo, Jun Zhang, Han Xiang Yi, Shu Ti Li

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Original language	English
Article number	088401
Journal	Chinese Physics B
Volume	22
Issue number	8
DOIs	https://doi.org/10.1088/1674-1056/22/8/088401
Publication status	Published - Aug 2013
Externally published	Yes

Keywords

GaN-based solar cells
InGaN/GaN multiple quantum wells
Metal-organic chemical vapor deposition

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1088/1674-1056/22/8/088401

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title = "Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content",

abstract = "The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.",

keywords = "GaN-based solar cells, InGaN/GaN multiple quantum wells, Metal-organic chemical vapor deposition",

author = "Zhao, {Bi Jun} and Xin Chen and Ren, {Zhi Wei} and Tong, {Jin Hui} and Wang, {Xing Fu} and Li, {Dan Wei} and Zhuo, {Xiang Jing} and Jun Zhang and Yi, {Han Xiang} and Li, {Shu Ti}",

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doi = "10.1088/1674-1056/22/8/088401",

language = "English",

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T1 - Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

AU - Zhao, Bi Jun

AU - Chen, Xin

AU - Ren, Zhi Wei

AU - Tong, Jin Hui

AU - Wang, Xing Fu

AU - Li, Dan Wei

AU - Zhuo, Xiang Jing

AU - Zhang, Jun

AU - Yi, Han Xiang

AU - Li, Shu Ti

PY - 2013/8

Y1 - 2013/8

N2 - The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

AB - The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

KW - GaN-based solar cells

KW - InGaN/GaN multiple quantum wells

KW - Metal-organic chemical vapor deposition

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U2 - 10.1088/1674-1056/22/8/088401

DO - 10.1088/1674-1056/22/8/088401

M3 - Journal article

AN - SCOPUS:84883870814

SN - 1674-1056

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

IS - 8

M1 - 088401

ER -

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Abstract

Keywords

ASJC Scopus subject areas

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