Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Bi Jun Zhao, Xin Chen, Zhi Wei Ren, Jin Hui Tong, Xing Fu Wang, Dan Wei Li, Xiang Jing Zhuo, Jun Zhang, Han Xiang Yi, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Original languageEnglish
Article number088401
JournalChinese Physics B
Volume22
Issue number8
DOIs
Publication statusPublished - Aug 2013
Externally publishedYes

Keywords

  • GaN-based solar cells
  • InGaN/GaN multiple quantum wells
  • Metal-organic chemical vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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