Enhanced performance of InGaN/GaN based solar cells with an In 0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well

Zhiwei Ren, Liu Chao, Xin Chen, Bijun Zhao, Xinfu Wang, Jinhui Tong, Jun Zhang, Xiangjing Zhuo, Danwei Li, Hanxiang Yi, Shuti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.

Original languageEnglish
Pages (from-to)7118-7124
Number of pages7
JournalOptics Express
Issue number6
Publication statusPublished - 25 Mar 2013
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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