Enhanced performance of InGaN/GaN based solar cells with an In 0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well

Zhiwei Ren; Liu Chao; Xin Chen; Bijun Zhao; Xinfu Wang; Jinhui Tong; Jun Zhang; Xiangjing Zhuo; Danwei Li; Hanxiang Yi; Shuti Li

doi:10.1364/OE.21.007118

Enhanced performance of InGaN/GaN based solar cells with an In _0.05Ga_0.95N ultra-thin inserting layer between GaN barrier and In_0.2Ga_0.8N well

Zhiwei Ren, Liu Chao, Xin Chen, Bijun Zhao, Xinfu Wang, Jinhui Tong, Jun Zhang, Xiangjing Zhuo, Danwei Li, Hanxiang Yi, Shuti Li

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.

Original language	English
Pages (from-to)	7118-7124
Number of pages	7
Journal	Optics Express
Volume	21
Issue number	6
DOIs	https://doi.org/10.1364/OE.21.007118
Publication status	Published - 25 Mar 2013
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

More information

10.1364/OE.21.007118

Cite this

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title = "Enhanced performance of InGaN/GaN based solar cells with an In 0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well",

abstract = "The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.",

author = "Zhiwei Ren and Liu Chao and Xin Chen and Bijun Zhao and Xinfu Wang and Jinhui Tong and Jun Zhang and Xiangjing Zhuo and Danwei Li and Hanxiang Yi and Shuti Li",

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doi = "10.1364/OE.21.007118",

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T1 - Enhanced performance of InGaN/GaN based solar cells with an In 0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well

AU - Ren, Zhiwei

AU - Chao, Liu

AU - Chen, Xin

AU - Zhao, Bijun

AU - Wang, Xinfu

AU - Tong, Jinhui

AU - Zhang, Jun

AU - Zhuo, Xiangjing

AU - Li, Danwei

AU - Yi, Hanxiang

AU - Li, Shuti

PY - 2013/3/25

Y1 - 2013/3/25

N2 - The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.

AB - The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by 65% and external quantum efficiency was increased by 59%, compared to its counterparts at room temperature under 1-sun AM1.5G illumination. The improvements in electrical and photovoltaic properties are mainly attributed to the UIL which can boost the crystal quality and alleviate strain. Moreover, it can act as a transition layer for higher indium incorporation and an effective light sub-absorption layer in multiple quantum wells.

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