Enhanced performance for OTFT on glass with HfO2as gate dielectric by UV-ozone treatment

Wing Man Tang, M. G. Helander, M. T. Greiner, G. Dong, W. T. Ng, Z. H. Lu

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

OTFTs on glass with high-κ material HfO2as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.
Original languageEnglish
Title of host publication2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages513-516
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China
Duration: 25 Dec 200927 Dec 2009

Conference

Conference2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Country/TerritoryChina
CityXi'an
Period25/12/0927/12/09

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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