Enhanced performance for OTFT on glass with HfO2as gate dielectric by UV-ozone treatment

Wing Man Tang; M. G. Helander; M. T. Greiner; G. Dong; W. T. Ng; Z. H. Lu

doi:10.1109/EDSSC.2009.5394200

Enhanced performance for OTFT on glass with HfO₂as gate dielectric by UV-ozone treatment

Wing Man Tang, M. G. Helander, M. T. Greiner, G. Dong, W. T. Ng, Z. H. Lu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

OTFTs on glass with high-κ material HfO2as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages	513-516
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2009.5394200
Publication status	Published - 1 Dec 2009
Externally published	Yes
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China Duration: 25 Dec 2009 → 27 Dec 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Country/Territory	China
City	Xi'an
Period	25/12/09 → 27/12/09

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2009.5394200

Cite this

@inproceedings{7af65c6f86454966ac6121c03e95c246,

title = "Enhanced performance for OTFT on glass with HfO2as gate dielectric by UV-ozone treatment",

abstract = "OTFTs on glass with high-κ material HfO2as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.",

author = "Tang, {Wing Man} and Helander, {M. G.} and Greiner, {M. T.} and G. Dong and Ng, {W. T.} and Lu, {Z. H.}",

year = "2009",

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day = "1",

doi = "10.1109/EDSSC.2009.5394200",

language = "English",

isbn = "9781424442980",

pages = "513--516",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 ; Conference date: 25-12-2009 Through 27-12-2009",

}

Tang, WM, Helander, MG, Greiner, MT, Dong, G, Ng, WT & Lu, ZH 2009, Enhanced performance for OTFT on glass with HfO₂as gate dielectric by UV-ozone treatment. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009., 5394200, pp. 513-516, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394200

Enhanced performance for OTFT on glass with HfO₂as gate dielectric by UV-ozone treatment. / Tang, Wing Man; Helander, M. G.; Greiner, M. T. et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 513-516 5394200.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - OTFTs on glass with high-κ material HfO2as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.

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