Abstract
Organic memory devices based on silver nanoparticles (NPs) embedded into pentacene thin films are demonstrated. The memory effect is adjusted by varying the location of Ag NPs within the pentacene thin film, which is ascribed to the different trap densities. Maximum memory window of 90 V is obtained with the pentacene (15 nm)/Ag NPs (5 nm)/ pentacene (25 nm) configuration, which is three times larger than the conventional structure where the Ag NPs are directly deposited on the silicon dioxide. Hole trap mechanism dominates the hysteretic behavior and each nanoparticle contributes to around 20 traps states. These results show the potential application of such a structure in organic memory devices.
Original language | English |
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Pages (from-to) | 990-995 |
Number of pages | 6 |
Journal | Organic Electronics: physics, materials, applications |
Volume | 11 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jan 2010 |
Keywords
- Charge traps
- Memory effect
- Nanoparticle
- Organic transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering