Enhanced memory effect in organic transistor by embedded silver nanoparticles

Sumei Wang, Chi Wah Leung, Paddy K.L. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

60 Citations (Scopus)

Abstract

Organic memory devices based on silver nanoparticles (NPs) embedded into pentacene thin films are demonstrated. The memory effect is adjusted by varying the location of Ag NPs within the pentacene thin film, which is ascribed to the different trap densities. Maximum memory window of 90 V is obtained with the pentacene (15 nm)/Ag NPs (5 nm)/ pentacene (25 nm) configuration, which is three times larger than the conventional structure where the Ag NPs are directly deposited on the silicon dioxide. Hole trap mechanism dominates the hysteretic behavior and each nanoparticle contributes to around 20 traps states. These results show the potential application of such a structure in organic memory devices.
Original languageEnglish
Pages (from-to)990-995
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume11
Issue number6
DOIs
Publication statusPublished - 1 Jan 2010

Keywords

  • Charge traps
  • Memory effect
  • Nanoparticle
  • Organic transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this