TY - JOUR
T1 - Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering
AU - Zhang, Qingyi
AU - Li, Ning
AU - Zhang, Tao
AU - Dong, Dianmeng
AU - Yang, Yongtao
AU - Wang, Yuehui
AU - Dong, Zhengang
AU - Shen, Jiaying
AU - Zhou, Tianhong
AU - Liang, Yuanlin
AU - Tang, Weihua
AU - Wu, Zhenping
AU - Zhang, Yang
AU - Hao, Jianhua
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (Nos. 12074044, 11874230, 52233014, 12274243), the Fund of State Key Laboratory of Information Photonics and Optical Communications (IPOC2021ZT05), Natural Science Foundation of Tianjin (18JCYBJC41500), the Fundamental Research Funds for the Central Universities (BUPT), and the Research Grants Council of Hong Kong (PolyU SRFS2122-5S02).
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/1
Y1 - 2023/1
N2 - Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga2O3/MgO/Nb:SrTiO3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 105 and detectivity of 2.33 × 1016 Jones among the reported wafer-scale grown Ga2O3-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.
AB - Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga2O3/MgO/Nb:SrTiO3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 105 and detectivity of 2.33 × 1016 Jones among the reported wafer-scale grown Ga2O3-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=85146871080&partnerID=8YFLogxK
U2 - 10.1038/s41467-023-36117-8
DO - 10.1038/s41467-023-36117-8
M3 - Journal article
C2 - 36697428
AN - SCOPUS:85146871080
SN - 2041-1723
VL - 14
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 418
ER -