Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94 Ba0.06 TiO 3 thin films

D. Y. Wang; N. Y. Chan; S. Li; S. H. Choy; H. Y. Tian; H. L W Chan

doi:10.1063/1.3518484

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi_0.5Na_0.5)_0.94 Ba_0.06 TiO ₃ thin films

D. Y. Wang, N. Y. Chan, S. Li, S. H. Choy, H. Y. Tian, H. L W Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

99 Citations (Scopus)

Abstract

Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi_0.5Na_0.5)_0.94 Ba _0.06 TiO₃ thin films epitaxially grown on CaRuO ₃ electroded (LaAlO₃) 0.3 (Sr₂ AlTaO ₆) 0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization P_r of 29.5 μC/ cm² and a remanent piezoelectric coefficient d33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.

Original language	English
Article number	212901
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3518484
Publication status	Published - 22 Nov 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3518484

http://hdl.handle.net/10397/4416

Cite this

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abstract = "Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi0.5Na0.5)0.94 Ba 0.06 TiO3 thin films epitaxially grown on CaRuO 3 electroded (LaAlO3) 0.3 (Sr2 AlTaO 6) 0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 μC/ cm2 and a remanent piezoelectric coefficient d33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.",

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AU - Wang, D. Y.

AU - Chan, N. Y.

AU - Li, S.

AU - Choy, S. H.

AU - Tian, H. Y.

AU - Chan, H. L W

PY - 2010/11/22

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Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi_0.5Na_0.5)_0.94 Ba_0.06 TiO ₃ thin films

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