Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94 Ba0.06 TiO 3 thin films

D. Y. Wang, N. Y. Chan, S. Li, S. H. Choy, H. Y. Tian, H. L W Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

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Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi0.5Na0.5)0.94 Ba 0.06 TiO3 thin films epitaxially grown on CaRuO 3 electroded (LaAlO3) 0.3 (Sr2 AlTaO 6) 0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 μC/ cm2 and a remanent piezoelectric coefficient d33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.

Original languageEnglish
Article number212901
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 22 Nov 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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