Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating

Yu Kuai Liu, Hon Fai Wong, Xuyun Guo, Sheung Mei Ng, Ka Kin Lam, Ye Zhu, Chee Leung Mak, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics.

Original languageEnglish
Pages (from-to)1099-1104
Number of pages6
JournalACS Applied Electronic Materials
Volume1
Issue number7
DOIs
Publication statusPublished - 23 Jul 2019

Keywords

  • anomalous Hall effect
  • antiferromagnetic
  • ferrimagnetic insulator
  • interface
  • spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry

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