Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating

Yu Kuai Liu; Hon Fai Wong; Xuyun Guo; Sheung Mei Ng; Ka Kin Lam; Ye Zhu; Chee Leung Mak; Chi Wah Leung

doi:10.1021/acsaelm.9b00101

Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating

Yu Kuai Liu, Hon Fai Wong, Xuyun Guo, Sheung Mei Ng, Ka Kin Lam, Ye Zhu, Chee Leung Mak, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics.

Original language	English
Pages (from-to)	1099-1104
Number of pages	6
Journal	ACS Applied Electronic Materials
Volume	1
Issue number	7
DOIs	https://doi.org/10.1021/acsaelm.9b00101
Publication status	Published - 23 Jul 2019

Keywords

anomalous Hall effect
antiferromagnetic
ferrimagnetic insulator
interface
spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrochemistry
Materials Chemistry

More information

10.1021/acsaelm.9b00101

http://hdl.handle.net/10397/100274

Cite this

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title = "Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating",

abstract = "Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics. ",

keywords = "anomalous Hall effect, antiferromagnetic, ferrimagnetic insulator, interface, spintronics",

author = "Liu, {Yu Kuai} and Wong, {Hon Fai} and Xuyun Guo and Ng, {Sheung Mei} and Lam, {Ka Kin} and Ye Zhu and Mak, {Chee Leung} and Leung, {Chi Wah}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 51502129), the Hong Kong Research Grant Council (PolyU 153027/17P and PolyU 15305718), and The Hong Kong Polytechnic University (1-ZE25 and 1-ZE6G). Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

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T1 - Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating

AU - Liu, Yu Kuai

AU - Wong, Hon Fai

AU - Guo, Xuyun

AU - Ng, Sheung Mei

AU - Lam, Ka Kin

AU - Zhu, Ye

AU - Mak, Chee Leung

AU - Leung, Chi Wah

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 51502129), the Hong Kong Research Grant Council (PolyU 153027/17P and PolyU 15305718), and The Hong Kong Polytechnic University (1-ZE25 and 1-ZE6G). Publisher Copyright: Copyright © 2019 American Chemical Society.

PY - 2019/7/23

Y1 - 2019/7/23

N2 - Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics.

AB - Interfacial spin current phenomena in multilayer hybrid structures consisting of heavy metal Pt and a ferrimagnetic insulator have recently drawn a great deal of attention. Here, we demonstrate the uncompensated spins of an insulator CoO surface can induce a square anomalous Hall effect (AHE) in a Pt/CoO device, where the AHE will change sign at 200 K for the thickness of CoO tCoO = 3.5 nm. More importantly, for a Pt/CoO bilayer grown on ferrimagnetic insulating Y3Fe5O12 (YIG) substrates, the ferrimagnetic gate can enhance the AHE resistance about three times and the Hall sign change temperature can be increased about 100 K compared to that of the Pt/CoO/SiO2/Si sample. Systematic study of the thickness of CoO-dependent AHE of Pt/CoO/YIG heterostructures reveals that the AHE resistance, coercive field, and Hall sign change temperature of Pt/CoO/YIG trilayers reach a maximum at tCoO = 3.5 nm. Our results highlight the key role of the antiferromagnetic material in the spin transport behavior of the magnetic multilayer structure, providing a possible pathway to detect the antiferromagnetic moment by electrical measurements, which will be great of importance for antiferromagnetic spintronics.

KW - anomalous Hall effect

KW - antiferromagnetic

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Enhanced Anomalous Hall Effect in Pt/CoO Heterostructures by Ferrimagnetic Insulator Gating

Abstract

Keywords

ASJC Scopus subject areas

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