Engineering of a charged incoherent BiFeO3/SrTiO3 interface

Dianxiang Ji (Corresponding Author), Yi Zhang, Wei Mao, Min Gu, Yiping Xiao, Yang Yang, Wei Guo, Zhengbin Gu, Jian Zhou, Peng Wang (Corresponding Author), Yuefeng Nie (Corresponding Author), Xiaoqing Pan

Research output: Journal article publicationJournal articleAcademic researchpeer-review


Atomic-level control of complex oxide heterostructure interfaces has resulted in unprecedented properties and functionalities. The majority of oxide heterointerfaces being intensively investigated maintain lattice coherence and exhibit a flawless epitaxial alignment between the films and the substrates. Here, we report the engineering of a charged incoherent BiFeO3/SrTiO3 interface using a tailored deposition sequence in reactive oxide molecular beam epitaxy. By introducing an additional iron oxide layer to disrupt the lattice coherence at the interface, the overlying BiFeO3 is stabilized in a tetragonal phase with its enhanced ferroelectric polarization pointing toward the SrTiO3 substrate, which drives free electrons to accumulate at the incoherent interface. Our findings reveal how controlling lattice coherence at oxide heterointerfaces can open new avenues for fabricating artificial oxide heterostructures with unique properties through precise interface engineering.
Original languageEnglish
Article number051103
Pages (from-to)1 to 7
Number of pages7
JournalAPL Materials
Issue number5
Publication statusPublished - 1 May 2024


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