Abstract
The doping of carbon-based materials is of great importance due to its ability to modulate their optical, electrical and optoelectronic properties. Nitrogen-doped graphene quantum dots (N-GQDs) have received significant attention due to their superior electrocatalytic activity, optical properties and biocompatibility. The energy-level structure of N-GQDs remains unknown, which hinders the development of N-GQDs for various applications. Here, we report a one-pot synthesis method to prepare large-quantity N-GQDs at room temperature and atmospheric pressure under a prolonged reaction time. Using this approach, we can effectively dope N into the N-GQDs. As revealed by electron energy loss spectroscopy, N-doping introduces a new energy level into the electronic structure, which is responsible for tuning the optical properties of the N-GQDs.
Original language | English |
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Pages (from-to) | 4908-4915 |
Number of pages | 8 |
Journal | Journal of Materials Chemistry C |
Volume | 1 |
Issue number | 32 |
DOIs | |
Publication status | Published - 4 Sept 2013 |
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry