Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. B. Chen; W. Lei; B. Chen; Y. B. Wang; X. Z. Liao; H. H. Tan; J. Zou; S. P. Ringer; C. Jagadish

doi:10.1063/1.4859915

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

Original language	English
Article number	022108
Journal	Applied Physics Letters
Volume	104
Issue number	2
DOIs	https://doi.org/10.1063/1.4859915
Publication status	Published - 13 Jan 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4859915

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title = "Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition",

abstract = "Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.",

author = "Chen, {Z. B.} and W. Lei and B. Chen and Wang, {Y. B.} and Liao, {X. Z.} and Tan, {H. H.} and J. Zou and Ringer, {S. P.} and C. Jagadish",

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T1 - Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

AU - Chen, Z. B.

AU - Lei, W.

AU - Chen, B.

AU - Wang, Y. B.

AU - Liao, X. Z.

AU - Tan, H. H.

AU - Zou, J.

AU - Ringer, S. P.

AU - Jagadish, C.

PY - 2014/1/13

Y1 - 2014/1/13

N2 - Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

AB - Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

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DO - 10.1063/1.4859915

M3 - Journal article

AN - SCOPUS:84893108124

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

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ER -

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Abstract

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