Abstract
The detailed structure and interfacial reaction of epitaxial YBa2Cu3O7/Y-ZrO2(YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3(LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO//[110]YSZ// [100]LAOand (001)YBCO//(001)YSZ//(001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.
Original language | English |
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Pages (from-to) | 1485-1491 |
Number of pages | 7 |
Journal | Journal of Materials Research |
Volume | 13 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jan 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering