Electron-beam double resist process to enhance bright field pattern resolution

Victor W C Chan, Philip Ching Ho Chan

Research output: Journal article publicationConference articleAcademic researchpeer-review

Abstract

An electron beam double resist process to obtain high resolution and dense bright field pattern was studied. The technique was demonstrated using a positive resist like polymethylmethacrylate (PMMA) and converting it to a bright field mask. Two resist hardening/softening methods called electron scanning and deep ultraviolet (DUV) exposure methods were compared. The DUV method resulted in a uniform pattern and short processing time without causing any PMMA residue due to insufficient exposure.
Original languageEnglish
Pages (from-to)849-854
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
Publication statusPublished - 1 May 2002
Externally publishedYes
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 1 Oct 20013 Oct 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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