Abstract
An electron beam double resist process to obtain high resolution and dense bright field pattern was studied. The technique was demonstrated using a positive resist like polymethylmethacrylate (PMMA) and converting it to a bright field mask. Two resist hardening/softening methods called electron scanning and deep ultraviolet (DUV) exposure methods were compared. The DUV method resulted in a uniform pattern and short processing time without causing any PMMA residue due to insufficient exposure.
Original language | English |
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Pages (from-to) | 849-854 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 May 2002 |
Externally published | Yes |
Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 1 Oct 2001 → 3 Oct 2001 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)