Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Yang Chai, Philip Ching Ho Chan, Yunyi Fu, Y. C. Chuang, C. Y. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

45 Citations (Scopus)

Abstract

The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.
Original languageEnglish
Pages (from-to)1001-1003
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
Publication statusPublished - 5 Sep 2008
Externally publishedYes

Keywords

  • Carbon nanotube (CNT)
  • Composite
  • Electromigration (EM)
  • Interconnect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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