Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Yang Chai; Philip Ching Ho Chan; Yunyi Fu; Y. C. Chuang; C. Y. Liu

doi:10.1109/LED.2008.2002075

Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Yang Chai, Philip Ching Ho Chan, Yunyi Fu, Y. C. Chuang, C. Y. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

58 Citations (Scopus)

Abstract

The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

Original language	English
Pages (from-to)	1001-1003
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	9
DOIs	https://doi.org/10.1109/LED.2008.2002075
Publication status	Published - 5 Sept 2008
Externally published	Yes

Keywords

Carbon nanotube (CNT)
Composite
Electromigration (EM)
Interconnect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/LED.2008.2002075

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title = "Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure",

abstract = "The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.",

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T1 - Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

AU - Chai, Yang

AU - Chan, Philip Ching Ho

AU - Fu, Yunyi

AU - Chuang, Y. C.

AU - Liu, C. Y.

PY - 2008/9/5

Y1 - 2008/9/5

N2 - The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

AB - The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 × 106A/cm2. The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

KW - Carbon nanotube (CNT)

KW - Composite

KW - Electromigration (EM)

KW - Interconnect

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DO - 10.1109/LED.2008.2002075

M3 - Journal article

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EP - 1003

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Abstract

Keywords

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