Electromagnetic–Thermo–Mechanical Coupling Behavior of Cu/Si Layered Thin Plate Under Pulsed Magnetic Field

Semiconductor-based electronic devices usually work under multiphysics fields rendering complex electromagnetic–thermo–mechanical coupling. In this work, we develop a penalty function method based on a finite element analysis to tackle this coupling behavior in a metal/semiconductor bilayer plate—the representative unit of semiconductor antenna, which receives strong and pulsed electromagnetic signals. Under these pulses, eddy current is generated, of which the magnitude varies remarkably from one plate to another due to the difference in electrical conductivity. In the concerned system, the metal layer generates much larger current, resulting in the large temperature rise and the nonnegligible Lorentz force, which could lead to delamination and failure of the semiconductor-based electronic device. This study provides theoretical guidance for the design and protection of semiconductor-based electronic devices in complex environments.