Electroluminescence from n-In₂O₃:Sn randomly assembled nanorods/p-SiC heterojunction

Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3(In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.