Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang; Siu Fung Yu; H. K. Liang; T. P. Chen; J. Gao; T. Wu

doi:10.1364/OE.18.015585

Electroluminescence from n-In₂O₃:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang, Siu Fung Yu, H. K. Liang, T. P. Chen, J. Gao, T. Wu

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3(In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.

Original language	English
Pages (from-to)	15585-15590
Number of pages	6
Journal	Optics Express
Volume	18
Issue number	15
DOIs	https://doi.org/10.1364/OE.18.015585
Publication status	Published - 19 Jul 2010
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.18.015585

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title = "Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction",

abstract = "Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3(In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.",

author = "Yang, {H. Y.} and Yu, {Siu Fung} and Liang, {H. K.} and Chen, {T. P.} and J. Gao and T. Wu",

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TY - JOUR

T1 - Electroluminescence from n-In2O3:Sn randomly assembled nanorods/p-SiC heterojunction

AU - Yang, H. Y.

AU - Yu, Siu Fung

AU - Liang, H. K.

AU - Chen, T. P.

AU - Gao, J.

AU - Wu, T.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3(In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.

AB - Room-temperature electroluminescence (EL) has been realized from Sn-doped In2O3(In2(VSn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed nIn203:Sn nanorods onto α p-type 4H-SiC substrate. It is found that the emission intensity of the heteroj unction LED under forward bias can be maximized by doping the In2O3nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at ∼395 and ∼440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In2O3:Sn nanorods.

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DO - 10.1364/OE.18.015585

M3 - Journal article

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JO - Optics Express

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Electroluminescence from n-In₂O₃:Sn randomly assembled nanorods/p-SiC heterojunction

Abstract

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