Electroluminescence from AlN nanowires grown on p-SiC substrate

H. Y. Yang; Siu Fung Yu; Y. Y. Hui; Shu Ping Lau

doi:10.1063/1.3513308

Electroluminescence from AlN nanowires grown on p-SiC substrate

H. Y. Yang, Siu Fung Yu, Y. Y. Hui, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

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Abstract

Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p -type 4H-SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.

Original language	English
Article number	191105
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3513308
Publication status	Published - 8 Nov 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3513308

http://hdl.handle.net/10397/4777

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@article{e54f79eb257343a2b09b24da5bfe48fb,

title = "Electroluminescence from AlN nanowires grown on p-SiC substrate",

abstract = "Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p -type 4H-SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.",

author = "Yang, {H. Y.} and Yu, {Siu Fung} and Hui, {Y. Y.} and Lau, {Shu Ping}",

year = "2010",

month = nov,

day = "8",

doi = "10.1063/1.3513308",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Electroluminescence from AlN nanowires grown on p-SiC substrate

AU - Yang, H. Y.

AU - Yu, Siu Fung

AU - Hui, Y. Y.

AU - Lau, Shu Ping

PY - 2010/11/8

Y1 - 2010/11/8

N2 - Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p -type 4H-SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.

AB - Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p -type 4H-SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.

UR - http://www.scopus.com/inward/record.url?scp=78249241224&partnerID=8YFLogxK

U2 - 10.1063/1.3513308

DO - 10.1063/1.3513308

M3 - Journal article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191105

ER -

Electroluminescence from AlN nanowires grown on p-SiC substrate

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