Electroluminescence from AlN nanowires grown on p-SiC substrate

H. Y. Yang, Siu Fung Yu, Y. Y. Hui, Shu Ping Lau

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Abstract

Aluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p -type 4H-SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.
Original languageEnglish
Article number191105
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
Publication statusPublished - 8 Nov 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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