Electrode effects on the breakdown characteristics of high-k HfO2metal-insulator-metal capacitors

Wing Man Tang; M. G. Helander; M. T. Greiner; W. T. Ng; Z. H. Lu

doi:10.1109/EDSSC.2010.5713760

Electrode effects on the breakdown characteristics of high-k HfO₂metal-insulator-metal capacitors

Wing Man Tang, M. G. Helander, M. T. Greiner, W. T. Ng, Z. H. Lu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

The effects of top metal contacts on the leakage current and breakdown characteristics of HfO2metal-insulator-metal (MIM) capacitors were investigated. It is found that the breakdown field strength of the devices scales with the work function of the top electrode; the higher the metal work function the higher the breakdown field strength of the devices. This observation is attributed to the different barrier height formed at the contacting metal/HfO2interfaces, which results in various amount of charge injected into the HfO2dielectrics. The joule heating from these injected charges increases the defect density leading to dielectric breakdown.

Original language	English
Title of host publication	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs	https://doi.org/10.1109/EDSSC.2010.5713760
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, Hong Kong Duration: 15 Dec 2010 → 17 Dec 2010

Conference

Conference	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/Territory	Hong Kong
City	Hong Kong
Period	15/12/10 → 17/12/10

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2010.5713760

Cite this

@inproceedings{11b46be1cfca4308b66bd29259c9e09b,

title = "Electrode effects on the breakdown characteristics of high-k HfO2metal-insulator-metal capacitors",

abstract = "The effects of top metal contacts on the leakage current and breakdown characteristics of HfO2metal-insulator-metal (MIM) capacitors were investigated. It is found that the breakdown field strength of the devices scales with the work function of the top electrode; the higher the metal work function the higher the breakdown field strength of the devices. This observation is attributed to the different barrier height formed at the contacting metal/HfO2interfaces, which results in various amount of charge injected into the HfO2dielectrics. The joule heating from these injected charges increases the defect density leading to dielectric breakdown.",

author = "Tang, {Wing Man} and Helander, {M. G.} and Greiner, {M. T.} and Ng, {W. T.} and Lu, {Z. H.}",

year = "2010",

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day = "1",

doi = "10.1109/EDSSC.2010.5713760",

language = "English",

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Tang, WM, Helander, MG, Greiner, MT, Ng, WT & Lu, ZH 2010, Electrode effects on the breakdown characteristics of high-k HfO₂metal-insulator-metal capacitors. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713760, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, Hong Kong, 15/12/10. https://doi.org/10.1109/EDSSC.2010.5713760

Electrode effects on the breakdown characteristics of high-k HfO₂metal-insulator-metal capacitors. / Tang, Wing Man; Helander, M. G.; Greiner, M. T. et al.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713760.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - The effects of top metal contacts on the leakage current and breakdown characteristics of HfO2metal-insulator-metal (MIM) capacitors were investigated. It is found that the breakdown field strength of the devices scales with the work function of the top electrode; the higher the metal work function the higher the breakdown field strength of the devices. This observation is attributed to the different barrier height formed at the contacting metal/HfO2interfaces, which results in various amount of charge injected into the HfO2dielectrics. The joule heating from these injected charges increases the defect density leading to dielectric breakdown.

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