Electricalperformance of multilayer MoS2transistor with ALD HfTiO gate dielectric

Ming Wen, J. P. Xu, L. Liu, Y. Huang, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Electrical performance of MOS2transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2and NH3) on the electrical performance of ALD HfTiO back-gated multilayer M0S2 transistor are investigated, and a highest mobility of 31.1 cm2/(V-s) is achieved for the NH3-annealed sample. However, different from the HfO2gated MOS2transistor, the HfTiO gated device exhibits larger off current and subthreshold swing. This is probably attributed to a smaller conduction-band offset between HfTiO and MOS2.
Original languageEnglish
Title of host publication2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
PublisherIEEE
Pages17-20
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Conference

Conference2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • anneal ambient
  • conduction band offset
  • field-effect transistor
  • mobility
  • multilayer MOS 2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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