Electricalperformance of multilayer MoS2transistor with ALD HfTiO gate dielectric

Ming Wen; J. P. Xu; L. Liu; Y. Huang; P. T. Lai; Wing Man Tang

doi:10.1109/EDSSC.2016.7785200

Electricalperformance of multilayer MoS₂transistor with ALD HfTiO gate dielectric

Ming Wen, J. P. Xu, L. Liu, Y. Huang, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

Electrical performance of MOS2transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2and NH3) on the electrical performance of ALD HfTiO back-gated multilayer M0S2 transistor are investigated, and a highest mobility of 31.1 cm2/(V-s) is achieved for the NH3-annealed sample. However, different from the HfO2gated MOS2transistor, the HfTiO gated device exhibits larger off current and subthreshold swing. This is probably attributed to a smaller conduction-band offset between HfTiO and MOS2.

Original language	English
Title of host publication	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	IEEE
Pages	17-20
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785200
Publication status	Published - 15 Dec 2016
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Conference

Conference	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

anneal ambient
conduction band offset
field-effect transistor
mobility
multilayer MOS 2

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

More information

10.1109/EDSSC.2016.7785200

Cite this

@inproceedings{69661316dff442108f445dd6e26423a1,

title = "Electricalperformance of multilayer MoS2transistor with ALD HfTiO gate dielectric",

abstract = "Electrical performance of MOS2transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2and NH3) on the electrical performance of ALD HfTiO back-gated multilayer M0S2 transistor are investigated, and a highest mobility of 31.1 cm2/(V-s) is achieved for the NH3-annealed sample. However, different from the HfO2gated MOS2transistor, the HfTiO gated device exhibits larger off current and subthreshold swing. This is probably attributed to a smaller conduction-band offset between HfTiO and MOS2.",

keywords = "anneal ambient, conduction band offset, field-effect transistor, mobility, multilayer MOS 2",

author = "Ming Wen and Xu, {J. P.} and L. Liu and Y. Huang and Lai, {P. T.} and Tang, {Wing Man}",

year = "2016",

month = dec,

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doi = "10.1109/EDSSC.2016.7785200",

language = "English",

pages = "17--20",

booktitle = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016",

publisher = "IEEE",

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note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

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Wen, M, Xu, JP, Liu, L, Huang, Y, Lai, PT & Tang, WM 2016, Electricalperformance of multilayer MoS₂transistor with ALD HfTiO gate dielectric. in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016., 7785200, IEEE, pp. 17-20, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785200

Electricalperformance of multilayer MoS₂transistor with ALD HfTiO gate dielectric. / Wen, Ming; Xu, J. P.; Liu, L. et al.
2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016. IEEE, 2016. p. 17-20 7785200.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Tang, Wing Man

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