Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition

W. Huang; J. J. Yang; G. Y. Gao; Y. Lei; J. Zhu; H. Z. Zeng; F. G. Zheng; Jianhua Hao

doi:10.1063/1.4890115

Electrical transport and resistance switching characteristics of BiFeO₃/Nb:SrTiO₃/GaAs heterostructure fabricated by pulsed laser deposition

W. Huang, J. J. Yang, G. Y. Gao, Y. Lei, J. Zhu, H. Z. Zeng, F. G. Zheng, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

BiFeO₃ thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO₃ as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2×10² at the applied voltage of ±13.4V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.

Original language	English
Article number	062904
Journal	Applied Physics Letters
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.4890115
Publication status	Published - 11 Aug 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4890115

http://hdl.handle.net/10397/35735

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title = "Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition",

abstract = "BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2×102 at the applied voltage of ±13.4V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.",

author = "W. Huang and Yang, {J. J.} and Gao, {G. Y.} and Y. Lei and J. Zhu and Zeng, {H. Z.} and Zheng, {F. G.} and Jianhua Hao",

year = "2014",

month = aug,

day = "11",

doi = "10.1063/1.4890115",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Electrical transport and resistance switching characteristics of BiFeO3/Nb:SrTiO3/GaAs heterostructure fabricated by pulsed laser deposition

AU - Huang, W.

AU - Yang, J. J.

AU - Gao, G. Y.

AU - Lei, Y.

AU - Zhu, J.

AU - Zeng, H. Z.

AU - Zheng, F. G.

AU - Hao, Jianhua

PY - 2014/8/11

Y1 - 2014/8/11

N2 - BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2×102 at the applied voltage of ±13.4V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.

AB - BiFeO3 thin films were epitaxially grown on (001) GaAs substrate by pulsed laser deposition with Nb doped SrTiO3 as a buffer layer. Piezoresponse force microscopy images exhibit effective ferroelectric switching of the heterostructure. The temperature-dependent current-voltage characteristics of the heterostructure reveal a resistance switching phenomenon and diode-like behavior with a rectifying ratio of 2×102 at the applied voltage of ±13.4V. The electrical transport mechanism in the heterostructure has been illustrated by constructing the energy band structure. In addition, the resistance switching behavior in the heterostructure could be explained by the polarization modulation of the depletion region at the interface of the semiconductor and the ferroelectric layers.

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U2 - 10.1063/1.4890115

DO - 10.1063/1.4890115

M3 - Journal article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062904

ER -

Electrical transport and resistance switching characteristics of BiFeO₃/Nb:SrTiO₃/GaAs heterostructure fabricated by pulsed laser deposition

Abstract

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