TiN films were deposited by an off-plane double bend filtered cathodic vacuum arc technique. The influence of deposition pressure, substrate bias, and deposition temperature on the structure and electrical resistivity were systematically studied. It was found that the increase in the deposition temperature results in a drastic decrease in the defect density and an increase in the grain size of TiN films, which accounts for a linear decrease in the electrical resistivity of TiN films. It indicates that the main factors that affect the electrical resistivity of TiN films were the N content, phase structure, and defect density.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1 Sep 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering