Electrical properties of TiN films deposited by filtered cathodic vacuum arc

Y. H. Cheng, B. K. Tay, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

TiN films were deposited by an off-plane double bend filtered cathodic vacuum arc technique. The influence of deposition pressure, substrate bias, and deposition temperature on the structure and electrical resistivity were systematically studied. It was found that the increase in the deposition temperature results in a drastic decrease in the defect density and an increase in the grain size of TiN films, which accounts for a linear decrease in the electrical resistivity of TiN films. It indicates that the main factors that affect the electrical resistivity of TiN films were the N content, phase structure, and defect density.
Original languageEnglish
Pages (from-to)2000-2006
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
Publication statusPublished - 1 Sep 2002
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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