Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

W. Huang; Z. P. Wu; Jianhua Hao

doi:10.1063/1.3075955

Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

W. Huang, Z. P. Wu, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

42 Citations (Scopus)

Abstract

Ferroelectric BaTiO3thin films were epitaxially grown on (001) GaAs substrate using SrTiO3as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO3|| [110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3thin film was grown on SrTiO3/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3(150 nm) / SrTiO3/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2at 200 kV/cm.

Original language	English
Article number	032905
Journal	Applied Physics Letters
Volume	94
Issue number	3
DOIs	https://doi.org/10.1063/1.3075955
Publication status	Published - 2 Feb 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3075955

http://hdl.handle.net/10397/27856

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@article{4cf793110a3c40d8a0e12843aacc74f6,

title = "Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy",

abstract = "Ferroelectric BaTiO3thin films were epitaxially grown on (001) GaAs substrate using SrTiO3as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO3|| [110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3thin film was grown on SrTiO3/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3(150 nm) / SrTiO3/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2at 200 kV/cm.",

author = "W. Huang and Wu, {Z. P.} and Jianhua Hao",

year = "2009",

month = feb,

day = "2",

doi = "10.1063/1.3075955",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

AU - Huang, W.

AU - Wu, Z. P.

AU - Hao, Jianhua

PY - 2009/2/2

Y1 - 2009/2/2

N2 - Ferroelectric BaTiO3thin films were epitaxially grown on (001) GaAs substrate using SrTiO3as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO3|| [110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3thin film was grown on SrTiO3/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3(150 nm) / SrTiO3/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2at 200 kV/cm.

AB - Ferroelectric BaTiO3thin films were epitaxially grown on (001) GaAs substrate using SrTiO3as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO3|| [110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3thin film was grown on SrTiO3/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3(150 nm) / SrTiO3/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2at 200 kV/cm.

UR - http://www.scopus.com/inward/record.url?scp=58849100463&partnerID=8YFLogxK

U2 - 10.1063/1.3075955

DO - 10.1063/1.3075955

M3 - Journal article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032905

ER -

Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

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