Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

W. Huang, Z. P. Wu, Jianhua Hao

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Abstract

Ferroelectric BaTiO3thin films were epitaxially grown on (001) GaAs substrate using SrTiO3as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO3|| [110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3thin film was grown on SrTiO3/GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3(150 nm) / SrTiO3/GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2at 200 kV/cm.
Original languageEnglish
Article number032905
JournalApplied Physics Letters
Volume94
Issue number3
DOIs
Publication statusPublished - 2 Feb 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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