Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric

Wing Man Tang, U. Aboudi, J. Provine, Roger T. Howe, H. S.Philip Wong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.
Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 3 Dec 20125 Dec 2012

Conference

Conference2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period3/12/125/12/12

Keywords

  • CuPc
  • High-k dielectric HfAlO
  • OTFT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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