Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric

Wing Man Tang; U. Aboudi; J. Provine; Roger T. Howe; H. S.Philip Wong

doi:10.1109/EDSSC.2012.6482866

Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric

Wing Man Tang, U. Aboudi, J. Provine, Roger T. Howe, H. S.Philip Wong

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.

Original language	English
Title of host publication	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs	https://doi.org/10.1109/EDSSC.2012.6482866
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand Duration: 3 Dec 2012 → 5 Dec 2012

Conference

Conference	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country/Territory	Thailand
City	Bangkok
Period	3/12/12 → 5/12/12

Keywords

CuPc
High-k dielectric HfAlO
OTFT

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2012.6482866

Cite this

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title = "Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric",

abstract = "CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.",

keywords = "CuPc, High-k dielectric HfAlO, OTFT",

author = "Tang, {Wing Man} and U. Aboudi and J. Provine and Howe, {Roger T.} and Wong, {H. S.Philip}",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2012.6482866",

language = "English",

isbn = "9781467356961",

booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",

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Tang, WM, Aboudi, U, Provine, J, Howe, RT & Wong, HSP 2012, Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482866, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 3/12/12. https://doi.org/10.1109/EDSSC.2012.6482866

Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric. / Tang, Wing Man; Aboudi, U.; Provine, J. et al.
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482866.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric

AU - Tang, Wing Man

AU - Aboudi, U.

AU - Provine, J.

AU - Howe, Roger T.

AU - Wong, H. S.Philip

PY - 2012/12/1

Y1 - 2012/12/1

N2 - CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.

AB - CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO2 sample. All these should be attributed to the addition of Al into the HfO2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.

KW - CuPc

KW - High-k dielectric HfAlO

KW - OTFT

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U2 - 10.1109/EDSSC.2012.6482866

DO - 10.1109/EDSSC.2012.6482866

M3 - Conference article published in proceeding or book

SN - 9781467356961

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

T2 - 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012

Y2 - 3 December 2012 through 5 December 2012

ER -

Electrical properties of CuPc-based OTFTs with atomic layer deposited HfAlO gate dielectric

Abstract

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Keywords

ASJC Scopus subject areas

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