Electrical breakdown of nanowires

Jiong Zhao, Hongyu Sun, Sheng Dai, Yan Wang, Jing Zhu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

86 Citations (Scopus)


Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.
Original languageEnglish
Pages (from-to)4647-4651
Number of pages5
JournalNano Letters
Issue number11
Publication statusPublished - 9 Nov 2011
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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