Electrical breakdown of nanowires

Jiong Zhao; Hongyu Sun; Sheng Dai; Yan Wang; Jing Zhu

doi:10.1021/nl202160c

Electrical breakdown of nanowires

Jiong Zhao, Hongyu Sun, Sheng Dai, Yan Wang, Jing Zhu

Research output: Journal article publication › Journal article › Academic research › peer-review

103 Citations (Scopus)

Abstract

Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

Original language	English
Pages (from-to)	4647-4651
Number of pages	5
Journal	Nano Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1021/nl202160c
Publication status	Published - 9 Nov 2011
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl202160c

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title = "Electrical breakdown of nanowires",

abstract = "Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.",

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AU - Zhao, Jiong

AU - Sun, Hongyu

AU - Dai, Sheng

AU - Wang, Yan

AU - Zhu, Jing

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N2 - Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

AB - Instantaneous electrical breakdown measurements of GaN and Ag nanowires are performed by an in situ transmission electron microscopy method. Our results directly reveal the mechanism that typical thermally heated semiconductor nanowires break at the midpoint, while metallic nanowires breakdown near the two ends due to the stress induced by electromigration. The different breakdown mechanisms for the nanowires are caused by the different thermal and electrical properties of the materials.

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U2 - 10.1021/nl202160c

DO - 10.1021/nl202160c

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SP - 4647

EP - 4651

JO - Nano Letters

JF - Nano Letters

IS - 11

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Electrical breakdown of nanowires

Abstract

ASJC Scopus subject areas

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