Electrical and structural studies of laser-debonded GaN light emitting diodes

K. K. Leung; C. P. Chan; Tai Man Yue; C. Surya

doi:10.1109/COMMAD.2006.4429889

Electrical and structural studies of laser-debonded GaN light emitting diodes

K. K. Leung, C. P. Chan, Tai Man Yue, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. Transmission electron microscopy is employed to characterize the laser affected zone of the debonded LEDs. The findings from TEM studies are in good agreement with our thermal analysis predictions. The as-debonded surface is then roughened by photo-electro chemical (PEC) wet etching to form nano-scaled hexagonal pyramid structures and this morphology is found to be useful for light extraction on LEDs.

Original language	English
Title of host publication	COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages	98-100
Number of pages	3
DOIs	https://doi.org/10.1109/COMMAD.2006.4429889
Publication status	Published - 1 Dec 2006
Event	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia Duration: 6 Dec 2006 → 8 Dec 2006

Conference

Conference	2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
Country/Territory	Australia
City	Perth
Period	6/12/06 → 8/12/06

Keywords

GaN
Laser liftoff
LED
MOCVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

More information

10.1109/COMMAD.2006.4429889

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title = "Electrical and structural studies of laser-debonded GaN light emitting diodes",

abstract = "We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. Transmission electron microscopy is employed to characterize the laser affected zone of the debonded LEDs. The findings from TEM studies are in good agreement with our thermal analysis predictions. The as-debonded surface is then roughened by photo-electro chemical (PEC) wet etching to form nano-scaled hexagonal pyramid structures and this morphology is found to be useful for light extraction on LEDs.",

keywords = "GaN, Laser liftoff, LED, MOCVD",

author = "Leung, {K. K.} and Chan, {C. P.} and Yue, {Tai Man} and C. Surya",

year = "2006",

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day = "1",

doi = "10.1109/COMMAD.2006.4429889",

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Leung, KK, Chan, CP, Yue, TM & Surya, C 2006, Electrical and structural studies of laser-debonded GaN light emitting diodes. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices., 4429889, pp. 98-100, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 6/12/06. https://doi.org/10.1109/COMMAD.2006.4429889

Electrical and structural studies of laser-debonded GaN light emitting diodes. / Leung, K. K.; Chan, C. P.; Yue, Tai Man et al.
COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 98-100 4429889.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Electrical and structural studies of laser-debonded GaN light emitting diodes

AU - Leung, K. K.

AU - Chan, C. P.

AU - Yue, Tai Man

AU - Surya, C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. Transmission electron microscopy is employed to characterize the laser affected zone of the debonded LEDs. The findings from TEM studies are in good agreement with our thermal analysis predictions. The as-debonded surface is then roughened by photo-electro chemical (PEC) wet etching to form nano-scaled hexagonal pyramid structures and this morphology is found to be useful for light extraction on LEDs.

AB - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. Transmission electron microscopy is employed to characterize the laser affected zone of the debonded LEDs. The findings from TEM studies are in good agreement with our thermal analysis predictions. The as-debonded surface is then roughened by photo-electro chemical (PEC) wet etching to form nano-scaled hexagonal pyramid structures and this morphology is found to be useful for light extraction on LEDs.

KW - GaN

KW - Laser liftoff

KW - LED

KW - MOCVD

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M3 - Conference article published in proceeding or book

SN - 1424405785

SN - 9781424405787

SP - 98

EP - 100

BT - COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

T2 - 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006

Y2 - 6 December 2006 through 8 December 2006

ER -

Electrical and structural studies of laser-debonded GaN light emitting diodes

Abstract

Conference

Keywords

ASJC Scopus subject areas

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