Electrical and Interfacial Properties of GaAs MOS Capacitors with La-Doped ZrON as Interfacial Passivation Layer

Han Han Lu, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

GaAs MOS capacitors with ZrTiON high- k gate dielectric and ZrLaON or ZrON as interfacial passivation layer (IPL) are fabricated, and their electrical properties are investigated. As compared with a control sample without IPL, improved interfacial quality and electrical properties are obtained for both samples, with the ZrTiON/ZrLaON/GaAs device, exhibiting the lowest interface-state density ( 1.1 × 1012cm -2 eV -1) , smallest gate leakage current density (1.62 × 10-5A cm-2at V-g =Vfb+ 1 V), and largest equivalent dielectric constant (25.1). All of these should be attributed to the fact that incorporating La into the ZrON IPL can: first, passivate its defects and, second, enhance the blocking role of the IPL against the Ti/O in-diffusion to the GaAs substrate and the Ga/As out-diffusion to the high- ${k}$ , thus resulting in an obvious reduction of relevant defects in the gate stack and also suppressing the formation of unstable Ga/As oxides and As-As dimer at the GaAs surface to obtain a much improved dielectric/GaAs interface.
Original languageEnglish
Article number7906643
Pages (from-to)2179-2184
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number5
DOIs
Publication statusPublished - 1 May 2017

Keywords

  • GaAs MOS capacitors
  • high-k dielectric
  • interface-state density
  • interfacial passivation layer (IPL).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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