Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Jing Xiang; Xiangling Li; Yun Ma; Qiang Zhao; Cheuk Lam Ho; Wai Yeung Wong

doi:10.1039/c8tc03140a

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Jing Xiang, Xiangling Li, Yun Ma, Qiang Zhao, Cheuk Lam Ho, Wai Yeung Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

30 Citations (Scopus)

Abstract

A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 10 ³ to 10 ⁴ with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

Original language	English
Pages (from-to)	11348-11355
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	6
Issue number	42
DOIs	https://doi.org/10.1039/c8tc03140a
Publication status	Published - 1 Jan 2018

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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10.1039/c8tc03140a

http://hdl.handle.net/10397/90005

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@article{5d7d26b1a6e94192ad6814fed10814a5,

title = "Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers",

abstract = " A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 10 3 to 10 4 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications. ",

author = "Jing Xiang and Xiangling Li and Yun Ma and Qiang Zhao and Ho, {Cheuk Lam} and Wong, {Wai Yeung}",

year = "2018",

month = jan,

day = "1",

doi = "10.1039/c8tc03140a",

language = "English",

volume = "6",

pages = "11348--11355",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "42",

}

TY - JOUR

T1 - Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

AU - Xiang, Jing

AU - Li, Xiangling

AU - Ma, Yun

AU - Zhao, Qiang

AU - Ho, Cheuk Lam

AU - Wong, Wai Yeung

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 10 3 to 10 4 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

AB - A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 10 3 to 10 4 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

UR - http://www.scopus.com/inward/record.url?scp=85056094920&partnerID=8YFLogxK

U2 - 10.1039/c8tc03140a

DO - 10.1039/c8tc03140a

M3 - Journal article

AN - SCOPUS:85056094920

SN - 2050-7534

VL - 6

SP - 11348

EP - 11355

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 42

ER -

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Abstract

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