Efficient 330-Gb/s PAM-8 modulation using silicon microring modulators

David W.U. Chan; Xiong Wu; Chao Lu; Alan Pak Tao Lau; Hon Ki Tsang

doi:10.1364/OL.479046

Efficient 330-Gb/s PAM-8 modulation using silicon microring modulators

David W.U. Chan, Xiong Wu, Chao Lu, Alan Pak Tao Lau, Hon Ki Tsang

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

57 Citations (Scopus)

Abstract

We propose and demonstrate a high-efficiency silicon microring modulator for next-generation optical transmitters operating at line rates above 300 Gb/s. The modulator supports high-order PAM-8 modulation up to 110 Gbaud (330 Gb/s), with a driving voltage of 1.8 Vpp. The small driving voltage and device capacitance yields a dynamic energy consumption of 3.1 fJ/bit. Using the modulator, we compare PAM-8 with ultrahigh baud rate PAM-4 of up to 130 Gbaud (260 Gb/s) and show PAM-8 is better suited for 300-Gb/s lane rate operation in bandwidth-constrained short-reach systems.

Original language	English
Pages (from-to)	1036-1039
Number of pages	4
Journal	Optics Letters
Volume	48
Issue number	4
DOIs	https://doi.org/10.1364/OL.479046
Publication status	Published - 15 Feb 2023

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1364/OL.479046

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abstract = "We propose and demonstrate a high-efficiency silicon microring modulator for next-generation optical transmitters operating at line rates above 300 Gb/s. The modulator supports high-order PAM-8 modulation up to 110 Gbaud (330 Gb/s), with a driving voltage of 1.8 Vpp. The small driving voltage and device capacitance yields a dynamic energy consumption of 3.1 fJ/bit. Using the modulator, we compare PAM-8 with ultrahigh baud rate PAM-4 of up to 130 Gbaud (260 Gb/s) and show PAM-8 is better suited for 300-Gb/s lane rate operation in bandwidth-constrained short-reach systems.",

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AU - Tsang, Hon Ki

N1 - Funding: Hong Kong Innovation and Technology Fund (ITS/226/21FP); Industry Sponsors (Cloudlight Technology, Ltd., Fizetta Ltd., Diffractive Technology Holding Ltd.). Acknowledgment: We thank Keysight Technologies for the loan of the AWG and CUMEC for device fabrication. Publisher Copyright: © 2023 Optica Publishing Group.

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N2 - We propose and demonstrate a high-efficiency silicon microring modulator for next-generation optical transmitters operating at line rates above 300 Gb/s. The modulator supports high-order PAM-8 modulation up to 110 Gbaud (330 Gb/s), with a driving voltage of 1.8 Vpp. The small driving voltage and device capacitance yields a dynamic energy consumption of 3.1 fJ/bit. Using the modulator, we compare PAM-8 with ultrahigh baud rate PAM-4 of up to 130 Gbaud (260 Gb/s) and show PAM-8 is better suited for 300-Gb/s lane rate operation in bandwidth-constrained short-reach systems.

AB - We propose and demonstrate a high-efficiency silicon microring modulator for next-generation optical transmitters operating at line rates above 300 Gb/s. The modulator supports high-order PAM-8 modulation up to 110 Gbaud (330 Gb/s), with a driving voltage of 1.8 Vpp. The small driving voltage and device capacitance yields a dynamic energy consumption of 3.1 fJ/bit. Using the modulator, we compare PAM-8 with ultrahigh baud rate PAM-4 of up to 130 Gbaud (260 Gb/s) and show PAM-8 is better suited for 300-Gb/s lane rate operation in bandwidth-constrained short-reach systems.

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Efficient 330-Gb/s PAM-8 modulation using silicon microring modulators

Abstract

ASJC Scopus subject areas

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