Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Jun Zhang; Xiang Jing Zhuo; Dan Wei Li; Zhi Wei Ren; Han Xiang Yi; Jin Hui Tong; Xing Fu Wang; Xin Chen; Bi Jun Zhao; Shu Ti Li

doi:10.1016/j.spmi.2014.05.017

Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Jun Zhang, Xiang Jing Zhuo, Dan Wei Li, Zhi Wei Ren, Han Xiang Yi, Jin Hui Tong, Xing Fu Wang, Xin Chen, Bi Jun Zhao, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.

Original language	English
Pages (from-to)	145-151
Number of pages	7
Journal	Superlattices and Microstructures
Volume	73
DOIs	https://doi.org/10.1016/j.spmi.2014.05.017
Publication status	Published - Sept 2014

Keywords

Efficiency droop
Light-emitting diodes
Low temperature transition layers
Polarization field

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

More information

10.1016/j.spmi.2014.05.017

Cite this

@article{1bcadfe75c544764b2eef600dd24b567,

title = "Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer",

abstract = "GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.",

keywords = "Efficiency droop, Light-emitting diodes, Low temperature transition layers, Polarization field",

author = "Jun Zhang and Zhuo, {Xiang Jing} and Li, {Dan Wei} and Ren, {Zhi Wei} and Yi, {Han Xiang} and Tong, {Jin Hui} and Wang, {Xing Fu} and Xin Chen and Zhao, {Bi Jun} and Li, {Shu Ti}",

note = "Funding Information: This work was supported by the National Nature Science Foundation of China (Grant No. 51172079 ), the Science and Technology Program of Guangdong province, China (Grant Nos. 2010B090400456 and 2010A081002002 ), the Science and Technology Program of Guangzhou (Grant No. 2011J4300018 ), the Program for Changjiang Scholars and Innovative Research Team in University (Grant No. IRT13064 ).",

year = "2014",

month = sep,

doi = "10.1016/j.spmi.2014.05.017",

language = "English",

volume = "73",

pages = "145--151",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

AU - Zhang, Jun

AU - Zhuo, Xiang Jing

AU - Li, Dan Wei

AU - Ren, Zhi Wei

AU - Yi, Han Xiang

AU - Tong, Jin Hui

AU - Wang, Xing Fu

AU - Chen, Xin

AU - Zhao, Bi Jun

AU - Li, Shu Ti

N1 - Funding Information: This work was supported by the National Nature Science Foundation of China (Grant No. 51172079 ), the Science and Technology Program of Guangdong province, China (Grant Nos. 2010B090400456 and 2010A081002002 ), the Science and Technology Program of Guangzhou (Grant No. 2011J4300018 ), the Program for Changjiang Scholars and Innovative Research Team in University (Grant No. IRT13064 ).

PY - 2014/9

Y1 - 2014/9

N2 - GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.

AB - GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.

KW - Efficiency droop

KW - Light-emitting diodes

KW - Low temperature transition layers

KW - Polarization field

UR - http://www.scopus.com/inward/record.url?scp=84902685192&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2014.05.017

DO - 10.1016/j.spmi.2014.05.017

M3 - Journal article

AN - SCOPUS:84902685192

SN - 0749-6036

VL - 73

SP - 145

EP - 151

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Abstract

Keywords

ASJC Scopus subject areas

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