Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Jun Zhang, Xiang Jing Zhuo, Dan Wei Li, Zhi Wei Ren, Han Xiang Yi, Jin Hui Tong, Xing Fu Wang, Xin Chen, Bi Jun Zhao, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)


GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively alleviate polarization field in the active layer and p-n junction region, consequently enhancing hole injection efficiency and electron blocking capability. Furthermore, the experimental results demonstrate that the low temperature (LT) transition layers can protect the active region from detrimental thermal annealing effect during high temperature p-GaN growth process. Finally, the reduced forward voltage and the enhanced output power about 42.2% were achieved at the injection current of 200 mA.

Original languageEnglish
Pages (from-to)145-151
Number of pages7
JournalSuperlattices and Microstructures
Publication statusPublished - Sep 2014
Externally publishedYes


  • Efficiency droop
  • Light-emitting diodes
  • Low temperature transition layers
  • Polarization field

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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