Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

Xing Fu Wang, Jin Hui Tong, Bi Jun Zhao, Xin Chen, Zhi Wei Ren, Dan Wei Li, Xiang Jing Zhuo, Jun Zhang, Han Xiang Yi, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Original languageEnglish
Article number098504
JournalChinese Physics B
Volume22
Issue number9
DOIs
Publication statusPublished - Sep 2013
Externally publishedYes

Keywords

  • GaN-based light-emitting diodes
  • Mg acceptor
  • p-InGaN layers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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