Effects of Te/Pb of glass on the electrical properties of silicon solar cells

The influences of different Te/Pb on the structures and performances of tellurite glass and the electrical properties of silicon solar cells were evaluated. Melting quenching method was used to prepare the tellurite glass with different Te/Pb. Glass structure and glass transition temperature were separately measured via Fourier Transform Infrared Spectrometer (FTIR) and Differential Scanning Calorimetry (DSC). The Efficiency Sorter and Field Emission Scanning Electron Microscopy (FE-SEM) were applied to investigate the electrical properties of solar cell and the microstructures of the Ag/Si contact interface of solar positive electrode, respectively. The experimental results indicate that the network of glass increases with the decreasing Te/Pb, while the glass transition temperature decreases. It is also found that the series resistance decreases at first and then increases with Te/Pb decreases. However, the short-circuit current, fill factor and photoelectric conversion efficiency show a reverse rule. There are lots of nano-Ag colloids presented in the glass layer and Si emitter of Ag/Si contact interface when the glass Te/Pb is 1.4 which is neither too high nor too low, which could facilitate the photoelectron conduction between the Ag and Si, thus reducing the series resistance and acquiring the optimum efficiency of solar cell.