Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor

Bochang Li, C. Y. Han, P. T. Lai, W. M. Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


The effects of source/drain (S/D) electrode material (Ni, Pt and Pd) and deposition method (electron-beam evaporation and sputtering) on the performance of pentacene organic thin-film transistor (OTFT) are studied. Experimental results show that the OTFT with Pd S/D electrodes deposited by sputtering exhibits the best electrical performance. This should be due to the small charge-injection barrier at the pentacene/electrode interface and small thermal load generated during the metal deposition. Besides, through varying the Pd S/D electrode thickness, it is found that increasing the electrode thickness results in performance degradation due to degraded pentacene/electrode interface, which is caused by higher thermal stress developed during longer deposition time.

Original languageEnglish
Pages (from-to)28-33
Number of pages6
JournalThin Solid Films
Publication statusPublished - 1 Dec 2018


  • Contact metal
  • Electrode thickness
  • Fabrication method
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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