Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

K. K S Curreem; P. F. Lee; J. Y. Dai

doi:10.1016/j.mssp.2006.10.040

Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

K. K S Curreem, P. F. Lee, J. Y. Dai

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al=1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si83Ge17by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfAlO thin films grown under different oxygen partial pressures were studied by transmission electron microscopy, and the their electrical properties were characterized by capacitance-voltage (C-V) and conductance-voltage measurements. Dependence of interfacial layer thickness and C-V characteristics of the HfAlO films on the growth of oxygen pressure was revealed. With an optimized oxygen partial pressure, an HfAlO film with an effective dielectric constant of 16 and a low interface state density of ∼2.1×1010cm-2eV-1was obtained.

Original language	English
Pages (from-to)	940-944
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.mssp.2006.10.040
Publication status	Published - 1 Dec 2006

Keywords

HfAlO
High-k dielectric
SiGe

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

More information

10.1016/j.mssp.2006.10.040

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title = "Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition",

abstract = "Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al=1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si83Ge17by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfAlO thin films grown under different oxygen partial pressures were studied by transmission electron microscopy, and the their electrical properties were characterized by capacitance-voltage (C-V) and conductance-voltage measurements. Dependence of interfacial layer thickness and C-V characteristics of the HfAlO films on the growth of oxygen pressure was revealed. With an optimized oxygen partial pressure, an HfAlO film with an effective dielectric constant of 16 and a low interface state density of ∼2.1×1010cm-2eV-1was obtained.",

keywords = "HfAlO, High-k dielectric, SiGe",

author = "Curreem, {K. K S} and Lee, {P. F.} and Dai, {J. Y.}",

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doi = "10.1016/j.mssp.2006.10.040",

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journal = "Materials Science in Semiconductor Processing",

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Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition. / Curreem, K. K S; Lee, P. F.; Dai, J. Y.
In: Materials Science in Semiconductor Processing, Vol. 9, No. 6, 01.12.2006, p. 940-944.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

AU - Curreem, K. K S

AU - Lee, P. F.

AU - Dai, J. Y.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al=1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si83Ge17by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfAlO thin films grown under different oxygen partial pressures were studied by transmission electron microscopy, and the their electrical properties were characterized by capacitance-voltage (C-V) and conductance-voltage measurements. Dependence of interfacial layer thickness and C-V characteristics of the HfAlO films on the growth of oxygen pressure was revealed. With an optimized oxygen partial pressure, an HfAlO film with an effective dielectric constant of 16 and a low interface state density of ∼2.1×1010cm-2eV-1was obtained.

AB - Dependence of oxygen partial pressures on structural and electrical characteristics of HfAlO (Hf:Al=1:1) high-k gate dielectric ultra-thin films grown on the compressively strained Si83Ge17by pulsed-laser deposition were investigated. The microstructure and the interfacial structure of the HfAlO thin films grown under different oxygen partial pressures were studied by transmission electron microscopy, and the their electrical properties were characterized by capacitance-voltage (C-V) and conductance-voltage measurements. Dependence of interfacial layer thickness and C-V characteristics of the HfAlO films on the growth of oxygen pressure was revealed. With an optimized oxygen partial pressure, an HfAlO film with an effective dielectric constant of 16 and a low interface state density of ∼2.1×1010cm-2eV-1was obtained.

KW - HfAlO

KW - High-k dielectric

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=33846090274&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2006.10.040

DO - 10.1016/j.mssp.2006.10.040

M3 - Journal article

SN - 1369-8001

VL - 9

SP - 940

EP - 944

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

Abstract

Keywords

ASJC Scopus subject areas

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