Effects of N2-annealing conditions on the sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)

Abstract

Hafnium oxide (HfO2) used as the gate insulator of metal-insulator-SiC Schottky-diode hydrogen sensors is annealed in nitrogen at different temperatures and durations for achieving a better performance. The hydrogen-sensing properties of these samples are compared with each other by taking measurements under various temperatures and hydrogen concentrations using a computer-controlled measurement system. The sensor response of the device is found to increase with the annealing temperature and time because higher annealing temperature and longer annealing time can enhance the densification of the HfO2film; improve the oxide stoichiometry and facilitate the growth of an interfacial layer to give better interface quality, thus causing a significant reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and conduction mechanism of the devices are also investigated.
Original languageEnglish
Pages (from-to)505-511
Number of pages7
JournalThin Solid Films
Volume519
Issue number1
DOIs
Publication statusPublished - 29 Oct 2010
Externally publishedYes

Keywords

  • HfO 2
  • Hydrogen sensors
  • Schottky diode
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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