Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route

Kin Wing Kwok; R. C.W. Tsang; H. L.W. Chan; C. L. Choy

doi:10.1007/s10971-008-1782-4

Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route

Kin Wing Kwok
, R. C.W. Tsang
, H. L.W. Chan
, C. L. Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

Niobium (Nb)-doped lead zirconate titanate (PZT) films have been prepared on platinized silicon substrates using a sol-gel method. The Zr/Ti ratios of the films are 53/47 and 40/60, and the Nb doping level ranges from 0 mol% to 3 mol%. Similar to the cases in bulk ceramics, after the doping with Nb, the remanent polarization Pr, effective transverse piezoelectric coefficients e31,cand pyroelectric coefficient p of the PZT films increase; but the longitudinal effective piezoelectric coefficient d33,cremains roughly unchanged. At the optimum Nb doping levels, the observed Pr, -e31,cand p reach a maximum value of 30 μC/cm2, 18 C/m2and 350 μC/m2K, respectively, for the PZT (53/47) films, and 37 μC/cm2, 7.9 c/m2and 370 μC/m2K for the PZT (40/60) films. Our results also reveal that there exist linear relations between p, e31,c/εrand Pr.

Original language	English
Pages (from-to)	148-153
Number of pages	6
Journal	Journal of Sol-Gel Science and Technology
Volume	47
Issue number	2
DOIs	https://doi.org/10.1007/s10971-008-1782-4
Publication status	Published - 1 Aug 2008

Keywords

Nb dopant
Piezoelectric properties
Pyroelectric properties
PZT thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Biomaterials
Condensed Matter Physics
Materials Chemistry

More information

10.1007/s10971-008-1782-4

Cite this

@article{125e80a5c24442d1b6ab999d9ce81ce5,

title = "Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route",

abstract = "Niobium (Nb)-doped lead zirconate titanate (PZT) films have been prepared on platinized silicon substrates using a sol-gel method. The Zr/Ti ratios of the films are 53/47 and 40/60, and the Nb doping level ranges from 0 mol\% to 3 mol\%. Similar to the cases in bulk ceramics, after the doping with Nb, the remanent polarization Pr, effective transverse piezoelectric coefficients e31,cand pyroelectric coefficient p of the PZT films increase; but the longitudinal effective piezoelectric coefficient d33,cremains roughly unchanged. At the optimum Nb doping levels, the observed Pr, -e31,cand p reach a maximum value of 30 μC/cm2, 18 C/m2and 350 μC/m2K, respectively, for the PZT (53/47) films, and 37 μC/cm2, 7.9 c/m2and 370 μC/m2K for the PZT (40/60) films. Our results also reveal that there exist linear relations between p, e31,c/εrand Pr.",

keywords = "Nb dopant, Piezoelectric properties, Pyroelectric properties, PZT thin films",

author = "Kwok, \{Kin Wing\} and Tsang, \{R. C.W.\} and Chan, \{H. L.W.\} and Choy, \{C. L.\}",

year = "2008",

month = aug,

day = "1",

doi = "10.1007/s10971-008-1782-4",

language = "English",

volume = "47",

pages = "148--153",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "2",

}

TY - JOUR

T1 - Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route

AU - Kwok, Kin Wing

AU - Tsang, R. C.W.

AU - Chan, H. L.W.

AU - Choy, C. L.

PY - 2008/8/1

Y1 - 2008/8/1

N2 - Niobium (Nb)-doped lead zirconate titanate (PZT) films have been prepared on platinized silicon substrates using a sol-gel method. The Zr/Ti ratios of the films are 53/47 and 40/60, and the Nb doping level ranges from 0 mol% to 3 mol%. Similar to the cases in bulk ceramics, after the doping with Nb, the remanent polarization Pr, effective transverse piezoelectric coefficients e31,cand pyroelectric coefficient p of the PZT films increase; but the longitudinal effective piezoelectric coefficient d33,cremains roughly unchanged. At the optimum Nb doping levels, the observed Pr, -e31,cand p reach a maximum value of 30 μC/cm2, 18 C/m2and 350 μC/m2K, respectively, for the PZT (53/47) films, and 37 μC/cm2, 7.9 c/m2and 370 μC/m2K for the PZT (40/60) films. Our results also reveal that there exist linear relations between p, e31,c/εrand Pr.

AB - Niobium (Nb)-doped lead zirconate titanate (PZT) films have been prepared on platinized silicon substrates using a sol-gel method. The Zr/Ti ratios of the films are 53/47 and 40/60, and the Nb doping level ranges from 0 mol% to 3 mol%. Similar to the cases in bulk ceramics, after the doping with Nb, the remanent polarization Pr, effective transverse piezoelectric coefficients e31,cand pyroelectric coefficient p of the PZT films increase; but the longitudinal effective piezoelectric coefficient d33,cremains roughly unchanged. At the optimum Nb doping levels, the observed Pr, -e31,cand p reach a maximum value of 30 μC/cm2, 18 C/m2and 350 μC/m2K, respectively, for the PZT (53/47) films, and 37 μC/cm2, 7.9 c/m2and 370 μC/m2K for the PZT (40/60) films. Our results also reveal that there exist linear relations between p, e31,c/εrand Pr.

KW - Nb dopant

KW - Piezoelectric properties

KW - Pyroelectric properties

KW - PZT thin films

UR - https://www.scopus.com/pages/publications/46149099783

U2 - 10.1007/s10971-008-1782-4

DO - 10.1007/s10971-008-1782-4

M3 - Journal article

SN - 0928-0707

VL - 47

SP - 148

EP - 153

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

IS - 2

ER -

Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this