Effects of niobium doping on lead zirconate titanate films deposited by a sol-gel route

Kin Wing Kwok, R. C.W. Tsang, H. L.W. Chan, C. L. Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)


Niobium (Nb)-doped lead zirconate titanate (PZT) films have been prepared on platinized silicon substrates using a sol-gel method. The Zr/Ti ratios of the films are 53/47 and 40/60, and the Nb doping level ranges from 0 mol% to 3 mol%. Similar to the cases in bulk ceramics, after the doping with Nb, the remanent polarization Pr, effective transverse piezoelectric coefficients e31,cand pyroelectric coefficient p of the PZT films increase; but the longitudinal effective piezoelectric coefficient d33,cremains roughly unchanged. At the optimum Nb doping levels, the observed Pr, -e31,cand p reach a maximum value of 30 μC/cm2, 18 C/m2and 350 μC/m2K, respectively, for the PZT (53/47) films, and 37 μC/cm2, 7.9 c/m2and 370 μC/m2K for the PZT (40/60) films. Our results also reveal that there exist linear relations between p, e31,c/εrand Pr.
Original languageEnglish
Pages (from-to)148-153
Number of pages6
JournalJournal of Sol-Gel Science and Technology
Issue number2
Publication statusPublished - 1 Aug 2008


  • Nb dopant
  • Piezoelectric properties
  • Pyroelectric properties
  • PZT thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry


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