Effects of Mg content on dark-line defects in II-VI green converters

Ye Zhu; J. Xie; T. J. Miller; M. A. Haase; X. Sun; S. McKernan; T. L. Smith; C. A. Leatherdale

doi:10.1016/j.scriptamat.2010.11.045

Effects of Mg content on dark-line defects in II-VI green converters

Ye Zhu
, J. Xie
, T. J. Miller
, M. A. Haase
, X. Sun
, S. McKernan
, T. L. Smith
, C. A. Leatherdale

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.

Original language	English
Pages (from-to)	568-571
Number of pages	4
Journal	Scripta Materialia
Volume	64
Issue number	6
DOIs	https://doi.org/10.1016/j.scriptamat.2010.11.045
Publication status	Published - 1 Mar 2011
Externally published	Yes

Keywords

Defect
Dislocation
Molecular beam epitaxy
Semiconductor devices
Transmission electron microscopy

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

More information

10.1016/j.scriptamat.2010.11.045

Cite this

@article{5ec33222033540c3b407198ac729fa3d,

title = "Effects of Mg content on dark-line defects in II-VI green converters",

abstract = "State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.",

keywords = "Defect, Dislocation, Molecular beam epitaxy, Semiconductor devices, Transmission electron microscopy",

author = "Ye Zhu and J. Xie and Miller, \{T. J.\} and Haase, \{M. A.\} and X. Sun and S. McKernan and Smith, \{T. L.\} and Leatherdale, \{C. A.\}",

year = "2011",

month = mar,

day = "1",

doi = "10.1016/j.scriptamat.2010.11.045",

language = "English",

volume = "64",

pages = "568--571",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "6",

}

TY - JOUR

T1 - Effects of Mg content on dark-line defects in II-VI green converters

AU - Zhu, Ye

AU - Xie, J.

AU - Miller, T. J.

AU - Haase, M. A.

AU - Sun, X.

AU - McKernan, S.

AU - Smith, T. L.

AU - Leatherdale, C. A.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.

AB - State-of-the-art green emission efficiency is achieved with CdMgZnSe color-converting heterostructures. A unique dark-line defect formation mechanism is revealed in CdMgZnSe green converters. Stacking faults extend horizontally inside the Mg-rich window layers, and partial dislocations associated with stacking faults give rise to dark lines. Such a mechanism indicates the low stacking-fault energy of the MgSe-containing alloys and suggests that, in addition to misfit strain, Mg content also plays an important role in defect formation in II-VI semiconductors.

KW - Defect

KW - Dislocation

KW - Molecular beam epitaxy

KW - Semiconductor devices

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/78651314494

U2 - 10.1016/j.scriptamat.2010.11.045

DO - 10.1016/j.scriptamat.2010.11.045

M3 - Journal article

SN - 1359-6462

VL - 64

SP - 568

EP - 571

JO - Scripta Materialia

JF - Scripta Materialia

IS - 6

ER -

Effects of Mg content on dark-line defects in II-VI green converters

Abstract

Keywords

ASJC Scopus subject areas

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